Large Signal Properties of AlGaN/GaN HEMTs on High Resistivity Silicon Substrates Grown by MBE
نویسندگان
چکیده
The large signal characteristics of 1 m long -gate AlGaN/GaN HEMTs on resistive silicon substrates have been measured and analyzed. The HEMTs demonstrated maximum transconductance and current density values of 350 mS/mm and 1,200 mA/mm respectively. High current gain and maximum power gain frequencies ft and fmax were measured at 25 GHz and 43 GHz. Large signal gain and power density values of 16 dB and 1.7 W/mm for a two-finger 1x75 m HEMT respectively were observed at 5 GHz. The device also exhibited PAE values as high as 40% with P1dB around +2.0 dBm for Class AB operation.
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